一、igbt工作原理是什么
IGBT是(shi)絕緣柵雙極(ji)晶(jing)體(ti)管(guan)(guan)(guan)的(de)(de)(de)英文簡稱,是(shi)一種三端(duan)半導(dao)體(ti)開(kai)關(guan)的(de)(de)(de)器(qi)件,一般igbt結構相當(dang)于一個四層半導(dao)體(ti)的(de)(de)(de)器(qi)件,四層器(qi)件通(tong)(tong)(tong)過組合(he)(he)PNP和NPN晶(jing)體(ti)管(guan)(guan)(guan)構成(cheng)(cheng)了(le)P-N-P-N排列(lie);igbt模塊則(ze)由(you)散熱基板、DBC基板、IGBT芯(xin)片(pian)、Diode芯(xin)片(pian)以及鍵(jian)合(he)(he)線組成(cheng)(cheng)。IGBT作為(wei)一種功率晶(jing)體(ti)管(guan)(guan)(guan),主要用于變(bian)(bian)頻器(qi)逆變(bian)(bian)和其(qi)他逆變(bian)(bian)電(dian)路,將直流電(dian)壓(ya)逆變(bian)(bian)成(cheng)(cheng)頻率可調(diao)的(de)(de)(de)交流電(dian),其(qi)工作原理是(shi)通(tong)(tong)(tong)過不(bu)斷(duan)激(ji)活和停用其(qi)柵極(ji)端(duan)子來(lai)開(kai)啟、關(guan)閉:IGBT的(de)(de)(de)開(kai)關(guan)作用是(shi)通(tong)(tong)(tong)過加正(zheng)向柵極(ji)電(dian)壓(ya)形成(cheng)(cheng)溝(gou)道,給PNP晶(jing)體(ti)管(guan)(guan)(guan)提供基極(ji)電(dian)流,使(shi)(shi)IGBT導(dao)通(tong)(tong)(tong)。反之,加反向門極(ji)電(dian)壓(ya)消除(chu)溝(gou)道,切斷(duan)基極(ji)電(dian),使(shi)(shi)IGBT關(guan)斷(duan)。若(ruo)在IGBT的(de)(de)(de)柵極(ji)和發射(she)(she)極(ji)之間(jian)加上驅(qu)動正(zheng)電(dian)壓(ya),則(ze)MOSFET導(dao)通(tong)(tong)(tong),這樣PNP晶(jing)體(ti)管(guan)(guan)(guan)的(de)(de)(de)集電(dian)極(ji)與基極(ji)之間(jian)成(cheng)(cheng)低阻狀(zhuang)態而使(shi)(shi)得晶(jing)體(ti)管(guan)(guan)(guan)導(dao)通(tong)(tong)(tong);若(ruo)IGBT的(de)(de)(de)柵極(ji)和發射(she)(she)極(ji)之間(jian)電(dian)壓(ya)為(wei)0V,則(ze)MOSFET截(jie)止,切斷(duan)PNP晶(jing)體(ti)管(guan)(guan)(guan)基極(ji)電(dian)流的(de)(de)(de)供給,使(shi)(shi)得晶(jing)體(ti)管(guan)(guan)(guan)截(jie)止。
二、igbt的作用和功能
IGBT的主要作用是可以很容易地將輸入的高壓直流電流轉換為高壓交流電,只需通過脈寬調制即可實現變頻控制,它通過十幾伏的門極控制信號,即可實現kV級電壓和kA級電流的控制,開關頻率可達每秒幾萬次,具有高電壓、大電流、高頻率、低導通壓降等特點,廣泛應用于新能源汽車的電動控制系統、車載空調控制系統以及充電樁領域,智能電網的發電端、輸電端、變電端、用電端,軌道交通的交流傳動系統等領域。如果您需要采購igbt芯片或igbt模塊,可以先來看看IGBT十大品牌。
三、igbt芯片和igbt模塊的區別
IGBT芯片(pian)是(shi)(shi)(shi)絕緣(yuan)柵雙(shuang)極(ji)(ji)型晶體(ti)(ti)(ti)管(guan)芯片(pian),是(shi)(shi)(shi)一(yi)(yi)種復合(he)全控(kong)型電(dian)壓驅動(dong)式功(gong)率(lv)半導(dao)體(ti)(ti)(ti)器件,被(bei)稱為(wei)“電(dian)力電(dian)子裝置的CPU”,它和(he)igbt模(mo)(mo)(mo)塊統稱igbt,不過(guo)igbt芯片(pian)和(he)igbt模(mo)(mo)(mo)塊還是(shi)(shi)(shi)有所不同(tong)的,簡單(dan)來說(shuo),IGBT芯片(pian)就(jiu)是(shi)(shi)(shi)一(yi)(yi)塊封裝好(hao)的絕緣(yuan)柵雙(shuang)極(ji)(ji)型晶體(ti)(ti)(ti)管(guan)芯片(pian),而igbt模(mo)(mo)(mo)塊是(shi)(shi)(shi)由多個IGBT芯片(pian)、反并聯二極(ji)(ji)管(guan)、驅動(dong)電(dian)路(lu)、保護電(dian)路(lu)等組成(cheng)的集成(cheng)模(mo)(mo)(mo)塊。一(yi)(yi)般來說(shuo),IGBT芯片(pian)不會單(dan)獨使用(yong),而是(shi)(shi)(shi)組裝成(cheng)igbt模(mo)(mo)(mo)塊再使用(yong),因為(wei)IGBT模(mo)(mo)(mo)塊具(ju)有節能、安(an)裝維修(xiu)方(fang)便、散(san)熱(re)穩(wen)定(ding)等特點(dian),當前(qian)市(shi)場上銷(xiao)售(shou)的多為(wei)模(mo)(mo)(mo)塊化產品(pin),一(yi)(yi)般所說(shuo)的IGBT也指IGBT模(mo)(mo)(mo)塊。
四、igbt模塊怎么測量好壞
igbt模塊損壞(huai)(huai)一(yi)般常見的(de)(de)(de)(de)(de)原(yuan)因(yin)有過(guo)電(dian)(dian)流損壞(huai)(huai)、過(guo)電(dian)(dian)壓損壞(huai)(huai)、靜電(dian)(dian)損壞(huai)(huai)、過(guo)熱損壞(huai)(huai)、機械(xie)應(ying)力(li)對(dui)產品的(de)(de)(de)(de)(de)破(po)壞(huai)(huai)等,判斷(duan)IGBT模塊是否(fou)損壞(huai)(huai),一(yi)般需要先對(dui)其(qi)(qi)進行檢測(ce),igbt模塊的(de)(de)(de)(de)(de)檢測(ce)一(yi)般分(fen)為(wei)(wei)(wei)兩部分(fen):1、判斷(duan)極(ji)(ji)性(xing):首(shou)先將(jiang)萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)撥在(zai)R×1KΩ擋(dang),用(yong)(yong)(yong)萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)測(ce)量時(shi)(shi),若某(mou)一(yi)極(ji)(ji)與其(qi)(qi)它(ta)(ta)兩極(ji)(ji)阻(zu)(zu)值為(wei)(wei)(wei)無(wu)窮大(da)(da),調換(huan)表(biao)(biao)(biao)筆后(hou)該(gai)極(ji)(ji)與其(qi)(qi)它(ta)(ta)兩極(ji)(ji)的(de)(de)(de)(de)(de)阻(zu)(zu)值仍(reng)為(wei)(wei)(wei)無(wu)窮大(da)(da),則判斷(duan)此極(ji)(ji)為(wei)(wei)(wei)柵(zha)極(ji)(ji)(G),其(qi)(qi)余兩極(ji)(ji)再用(yong)(yong)(yong)萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)測(ce)量,若測(ce)得阻(zu)(zu)值為(wei)(wei)(wei)無(wu)窮大(da)(da),調換(huan)表(biao)(biao)(biao)筆后(hou)測(ce)量阻(zu)(zu)值較小。在(zai)測(ce)量阻(zu)(zu)值較小的(de)(de)(de)(de)(de)一(yi)次中,則判斷(duan)紅表(biao)(biao)(biao)筆接的(de)(de)(de)(de)(de)為(wei)(wei)(wei)集(ji)電(dian)(dian)極(ji)(ji)(C);黑表(biao)(biao)(biao)筆接地為(wei)(wei)(wei)發(fa)射極(ji)(ji)(E)。2、判斷(duan)好壞(huai)(huai):將(jiang)萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)撥在(zai)R×10KΩ擋(dang),用(yong)(yong)(yong)黑表(biao)(biao)(biao)筆接IGBT的(de)(de)(de)(de)(de)集(ji)電(dian)(dian)極(ji)(ji)(C),紅表(biao)(biao)(biao)筆接IGBT 的(de)(de)(de)(de)(de)發(fa)射極(ji)(ji)(E),此時(shi)(shi)萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)的(de)(de)(de)(de)(de)指(zhi)(zhi)針在(zai)零位。用(yong)(yong)(yong)手(shou)指(zhi)(zhi)同時(shi)(shi)觸及一(yi)下(xia)柵(zha)極(ji)(ji)(G)和集(ji)電(dian)(dian)極(ji)(ji)(C),這時(shi)(shi)IGBT被觸發(fa)導通,萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)的(de)(de)(de)(de)(de)指(zhi)(zhi)針擺(bai)向阻(zu)(zu)值較小的(de)(de)(de)(de)(de)方向,并能站住(zhu)指(zhi)(zhi)示在(zai)某(mou)一(yi)位置。然后(hou)再用(yong)(yong)(yong)手(shou)指(zhi)(zhi)同時(shi)(shi)觸及一(yi)下(xia)柵(zha)極(ji)(ji)(G)和發(fa)射極(ji)(ji)(E),這時(shi)(shi)IGBT被阻(zu)(zu)斷(duan),萬(wan)用(yong)(yong)(yong)表(biao)(biao)(biao)的(de)(de)(de)(de)(de)指(zhi)(zhi)針回(hui)零。此時(shi)(shi)即可判斷(duan)IGBT是好的(de)(de)(de)(de)(de)。