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光伏發(fa)(fa)電(dian)(dian)是利用半導體界面(mian)的(de)(de)光生(sheng)伏特效應而(er)將光能直接轉(zhuan)變(bian)(bian)為(wei)電(dian)(dian)能的(de)(de)一種技術。主要由(you)太(tai)陽(yang)電(dian)(dian)池板(ban)（組件(jian)）、控制(zhi)器和逆變(bian)(bian)器三大(da)部(bu)(bu)分組成(cheng)，主要部(bu)(bu)件(jian)由(you)電(dian)(dian)子元(yuan)器件(jian)構成(cheng)。太(tai)陽(yang)能電(dian)(dian)池經過串聯后進(jin)行封裝保護可(ke)形(xing)(xing)成(cheng)大(da)面(mian)積的(de)(de)太(tai)陽(yang)電(dian)(dian)池組件(jian)，再配合上(shang)功(gong)率控制(zhi)器等部(bu)(bu)件(jian)就形(xing)(xing)成(cheng)了(le)光伏發(fa)(fa)電(dian)(dian)裝置(zhi)。

光(guang)伏發(fa)電(dian)(dian)(dian)(dian)的(de)(de)主要原(yuan)(yuan)理是半導體(ti)的(de)(de)光(guang)電(dian)(dian)(dian)(dian)效應(ying)。光(guang)子(zi)(zi)照射到(dao)金(jin)(jin)屬(shu)(shu)(shu)上時(shi)，它的(de)(de)能(neng)(neng)量可(ke)以被金(jin)(jin)屬(shu)(shu)(shu)中(zhong)某個(ge)電(dian)(dian)(dian)(dian)子(zi)(zi)全部(bu)(bu)吸收(shou)，電(dian)(dian)(dian)(dian)子(zi)(zi)吸收(shou)的(de)(de)能(neng)(neng)量足夠大，能(neng)(neng)克服金(jin)(jin)屬(shu)(shu)(shu)內部(bu)(bu)引力做功，離(li)開金(jin)(jin)屬(shu)(shu)(shu)表面逃逸出(chu)來(lai)，成(cheng)為(wei)光(guang)電(dian)(dian)(dian)(dian)子(zi)(zi)。硅(gui)原(yuan)(yuan)子(zi)(zi)有4個(ge)外層(ceng)電(dian)(dian)(dian)(dian)子(zi)(zi)，如果在純硅(gui)中(zhong)摻入有5個(ge)外層(ceng)電(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)原(yuan)(yuan)子(zi)(zi)如磷原(yuan)(yuan)子(zi)(zi)，就(jiu)成(cheng)為(wei)N型(xing)半導體(ti)；若在純硅(gui)中(zhong)摻入有3個(ge)外層(ceng)電(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)原(yuan)(yuan)子(zi)(zi)如硼原(yuan)(yuan)子(zi)(zi)，形成(cheng)P型(xing)半導體(ti)。當P型(xing)和(he)N型(xing)結合(he)在一起時(shi)，接(jie)觸面就(jiu)會形成(cheng)電(dian)(dian)(dian)(dian)勢差，成(cheng)為(wei)太陽(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)池。當太陽(yang)(yang)光(guang)照射到(dao)P-N結后，空穴由P極(ji)(ji)區(qu)往N極(ji)(ji)區(qu)移(yi)動，電(dian)(dian)(dian)(dian)子(zi)(zi)由N極(ji)(ji)區(qu)向P極(ji)(ji)區(qu)移(yi)動，形成(cheng)電(dian)(dian)(dian)(dian)流。

光(guang)(guang)(guang)電(dian)效應就是光(guang)(guang)(guang)照(zhao)使不(bu)均勻半導(dao)體或半導(dao)體與(yu)金屬結合的不(bu)同部位(wei)之間(jian)產生電(dian)位(wei)差的現象。它首先是由(you)光(guang)(guang)(guang)子(zi)(光(guang)(guang)(guang)波)轉化(hua)為(wei)電(dian)子(zi)、光(guang)(guang)(guang)能(neng)量轉化(hua)為(wei)電(dian)能(neng)量的過程；其(qi)次，是形(xing)成電(dian)壓過程。

多晶硅(gui)經(jing)過(guo)鑄錠、破(po)錠、切片等(deng)程序后(hou)，制(zhi)作成(cheng)待加工的(de)(de)(de)硅(gui)片。在(zai)硅(gui)片上摻(chan)雜和擴散微量的(de)(de)(de)硼、磷等(deng)，就(jiu)形(xing)成(cheng)P－N結(jie)。然后(hou)采用絲網(wang)印刷，將(jiang)(jiang)精配好的(de)(de)(de)銀漿印在(zai)硅(gui)片上做成(cheng)柵(zha)線，經(jing)過(guo)燒(shao)結(jie)，同時制(zhi)成(cheng)背電極，并(bing)在(zai)有柵(zha)線的(de)(de)(de)面(mian)涂一層(ceng)防反射涂層(ceng)，電池片就(jiu)至此制(zhi)成(cheng)。電池片排列組(zu)(zu)(zu)合成(cheng)電池組(zu)(zu)(zu)件，就(jiu)組(zu)(zu)(zu)成(cheng)了大的(de)(de)(de)電路(lu)板。一般在(zai)組(zu)(zu)(zu)件四周(zhou)包(bao)鋁框，正(zheng)面(mian)覆蓋玻璃，反面(mian)安裝(zhuang)(zhuang)電極。有了電池組(zu)(zu)(zu)件和其他輔助(zhu)設備，就(jiu)可(ke)以(yi)組(zu)(zu)(zu)成(cheng)發(fa)(fa)電系(xi)統。為了將(jiang)(jiang)直流(liu)電轉(zhuan)(zhuan)化交流(liu)電，需要安裝(zhuang)(zhuang)電流(liu)轉(zhuan)(zhuan)換器。發(fa)(fa)電后(hou)可(ke)用蓄電池存儲，也可(ke)輸入公共電網(wang)。發(fa)(fa)電系(xi)統成(cheng)本中，電池組(zu)(zu)(zu)件約占(zhan)50%，電流(liu)轉(zhuan)(zhuan)換器、安裝(zhuang)(zhuang)費、其他輔助(zhu)部件以(yi)及(ji)其他費用占(zhan)另外(wai)50%。

無論從世(shi)界(jie)還是從中國來(lai)看，常(chang)規能(neng)源(yuan)(yuan)都(dou)是很有限的(de)(de)(de)。中國的(de)(de)(de)一次能(neng)源(yuan)(yuan)儲(chu)量遠遠低于(yu)世(shi)界(jie)的(de)(de)(de)平均水平，大約只有世(shi)界(jie)總儲(chu)量的(de)(de)(de)10%。太陽能(neng)是人類(lei)取之(zhi)不(bu)盡用之(zhi)不(bu)竭的(de)(de)(de)可(ke)再生能(neng)源(yuan)(yuan)，具有充分的(de)(de)(de)清(qing)潔性(xing)(xing)(xing)(xing)(xing)、絕(jue)對的(de)(de)(de)安(an)全性(xing)(xing)(xing)(xing)(xing)、相對的(de)(de)(de)廣泛性(xing)(xing)(xing)(xing)(xing)、確(que)實的(de)(de)(de)長壽命(ming)和(he)免維(wei)護性(xing)(xing)(xing)(xing)(xing)、資源(yuan)(yuan)的(de)(de)(de)充足性(xing)(xing)(xing)(xing)(xing)及潛在的(de)(de)(de)經濟性(xing)(xing)(xing)(xing)(xing)等優點(dian)，在能(neng)源(yuan)(yuan)戰(zhan)略(lve)中具有重要地位。