太陽能(neng)(neng)如何轉化 太陽能(neng)(neng)轉化成(cheng)熱能(neng)(neng)和電能(neng)(neng)的方(fang)式
太陽(yang)能如何轉(zhuan)化 太陽(yang)能轉(zhuan)化成熱能和電能的方式
太陽(yang)能(neng)(neng)是(shi)一種(zhong)輻(fu)射能(neng)(neng),具有即時性,必須即時轉(zhuan)換(huan)(huan)成其它形式能(neng)(neng)量才能(neng)(neng)利(li)用(yong)和貯(zhu)存。將(jiang)太陽(yang)能(neng)(neng)轉(zhuan)換(huan)(huan)成不(bu)同形式的(de)能(neng)(neng)量需要不(bu)同的(de)能(neng)(neng)量轉(zhuan)換(huan)(huan)器:集熱(re)器通過吸收(shou)面可以(yi)將(jiang)太陽(yang)能(neng)(neng)轉(zhuan)換(huan)(huan)成熱(re)能(neng)(neng),利(li)用(yong)光伏效(xiao)應(ying)太陽(yang)電池可以(yi)將(jiang)太陽(yang)能(neng)(neng)轉(zhuan)換(huan)(huan)成電能(neng)(neng),通過光合(he)作(zuo)用(yong)植物可以(yi)將(jiang)太陽(yang)能(neng)(neng)轉(zhuan)換(huan)(huan)成生物質能(neng)(neng),等等。原則上(shang),太陽(yang)能(neng)(neng)可以(yi)直接或間(jian)接轉(zhuan)換(huan)(huan)成任(ren)何形式的(de)能(neng)(neng)量,但轉(zhuan)換(huan)(huan)次數(shu)越多,最終太陽(yang)能(neng)(neng)轉(zhuan)換(huan)(huan)的(de)效(xiao)率便越低(di)。
太陽能-熱能轉換
黑(hei)(hei)色(se)吸(xi)(xi)收(shou)(shou)(shou)面(mian)吸(xi)(xi)收(shou)(shou)(shou)太(tai)陽輻射(she),可以將太(tai)陽能(neng)轉換成熱能(neng),其吸(xi)(xi)收(shou)(shou)(shou)性(xing)能(neng)好,但輻射(she)熱損失(shi)大,所(suo)以黑(hei)(hei)色(se)吸(xi)(xi)收(shou)(shou)(shou)面(mian)不是(shi)(shi)理想的(de)太(tai)陽能(neng)吸(xi)(xi)收(shou)(shou)(shou)面(mian)。選(xuan)擇性(xing)吸(xi)(xi)收(shou)(shou)(shou)面(mian)具有(you)高的(de)太(tai)陽吸(xi)(xi)收(shou)(shou)(shou)比和(he)低的(de)發射(she)比,吸(xi)(xi)收(shou)(shou)(shou)太(tai)陽輻射(she)的(de)性(xing)能(neng)好,且輻射(she)熱損失(shi)小(xiao),是(shi)(shi)比較理想的(de)太(tai)陽能(neng)吸(xi)(xi)收(shou)(shou)(shou)面(mian)。這種吸(xi)(xi)收(shou)(shou)(shou)面(mian)由選(xuan)擇性(xing)吸(xi)(xi)收(shou)(shou)(shou)材(cai)料(liao)制(zhi)成,簡稱為選(xuan)擇性(xing)涂層(ceng)。它是(shi)(shi)在本世紀40年(nian)代提出的(de),1955年(nian)達到(dao)實用要(yao)求,70年(nian)代以后研制(zhi)成許多新型選(xuan)擇性(xing)涂層(ceng)并進行(xing)批量(liang)生產和(he)推廣應用,目前已研制(zhi)成上百種選(xuan)擇性(xing)涂層(ceng)。
太陽能-電能轉換
電(dian)能(neng)是(shi)一種高品位能(neng)量(liang),利用(yong)、傳輸和(he)分配(pei)都比(bi)較(jiao)方(fang)便。將太陽能(neng)轉(zhuan)換(huan)(huan)為電(dian)能(neng)是(shi)大規模利用(yong)太陽能(neng)的重要技術(shu)基礎,世界各(ge)國都十(shi)分重視,其(qi)轉(zhuan)換(huan)(huan)途徑很多(duo),有(you)光(guang)電(dian)直接轉(zhuan)換(huan)(huan),有(you)光(guang)熱(re)電(dian)間接轉(zhuan)換(huan)(huan)等(deng)。這里重點(dian)介紹(shao)光(guang)電(dian)直接轉(zhuan)換(huan)(huan)器件--太陽電(dian)池(chi)。
世界上,1941年(nian)(nian)出現有關硅太(tai)(tai)陽(yang)電(dian)池報導(dao),1954年(nian)(nian)研制成(cheng)效率達(da)6%的單晶硅太(tai)(tai)陽(yang)電(dian)池,1958年(nian)(nian)太(tai)(tai)陽(yang)電(dian)池應用(yong)于(yu)(yu)衛星供電(dian)。在70年(nian)(nian)代以前,由于(yu)(yu)太(tai)(tai)陽(yang)電(dian)池效率低(di),售價(jia)昂(ang)貴,主要應用(yong)在空(kong)間。70年(nian)(nian)代以后,對太(tai)(tai)陽(yang)電(dian)池材料、結構和(he)工藝進行了廣(guang)泛研究,在提(ti)高(gao)效率和(he)降低(di)成(cheng)本方面(mian)取得較(jiao)大進展,地面(mian)應用(yong)規(gui)(gui)模逐(zhu)漸擴大,但從大規(gui)(gui)模利用(yong)太(tai)(tai)陽(yang)能而言,與(yu)常規(gui)(gui)發電(dian)相(xiang)比,成(cheng)本仍然大高(gao)。
目前,世界上太陽電(dian)池(chi)(chi)(chi)的實(shi)驗室效率最高水準為:單晶(jing)硅電(dian)池(chi)(chi)(chi)24%(4cm2),多晶(jing)硅電(dian)池(chi)(chi)(chi)18.6%(4cm2),InGaP/GaAs雙結(jie)電(dian)池(chi)(chi)(chi)30.28%(AM1),非晶(jing)硅電(dian)池(chi)(chi)(chi)14.5%(初始(shi))、12.8(穩定),碲化鎘電(dian)池(chi)(chi)(chi)15.8%,硅帶電(dian)池(chi)(chi)(chi)14.6%,二氧化鈦有機納米(mi)電(dian)池(chi)(chi)(chi)10.96%。